III–V Nanowire Transistors for Low-Power Logic Applications: A Review and Outlook
نویسندگان
چکیده
III–V semiconductors, especially InAs, have much higher electron mobilities than Si and have been considered as promising candidates for n-channel materials for post-Si lowpower CMOS logic applications. Combined with the inherent 3-D structure that enables the gate-all-around (GAA) geometry for superb gate electrostatic control, III–V nanowire (NW) MOSFETs are well positioned to extend the scaling beyond Si. This paper attempts to provide a review of the growth and fabrication approaches (both bottom–up and top–down), and the state-of-theart device performance of III-V NW GAA MOSFETs, as well as an outlook of their scaling potential.
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